Power Semiconductor Devices Based on Non-silicon Materials

• SiC switching power devices
  1) 4H-SiC BJT
      :  Higher common emitter current gain compared to the current gain values reported for Si BJT.
  Overcomes the problem of the 2nd breakdown of Si BJT
  
  2) 4H-SiC MOSFET
   
• GaN switching power devices  

Advanced Silicon Semiconductor Devices

• Advanced 30~40V low voltage power devices for high freqeuncy DC/DC converters

• Power and VLSI devices-circuit integration
  (SMART Power IC)

• Monolithic Vertical Trench Power MOS integration for a high current synchronous buck converter

Novel device technology based on high power thyristor technology 

• 4.5 kV SiC ETO(emitter turn-off thyristor)

• 700V Double Resurf SA-LIGBT
  : With the concept of the Hybrid IGBT, a new power device with better performance than COOLMOS is pursuing

Device modeling, calibration and parameter extraction

• High voltage SiC device design, optimization and modeling